发明申请
- 专利标题： AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS
- 专利标题（中）： 含有氧化硅介电和多晶硅膜的化学机械抛光底材的水性抛光组合物和工艺
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申请号： US13991924申请日： 2011-12-07
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公开(公告)号： US20130248756A1公开(公告)日： 2013-09-26
- 发明人: Shyam Sundar Venkataraman , Eason Yu-Shen Su , Arend Jouke Kingma , Bastian Marten Noller
- 申请人： Shyam Sundar Venkataraman , Eason Yu-Shen Su , Arend Jouke Kingma , Bastian Marten Noller
- 申请人地址： DE Ludwigshafen
- 专利权人： BASF SE
- 当前专利权人： BASF SE
- 当前专利权人地址： DE Ludwigshafen
- 优先权： EP10194476.7 20101210
- 国际申请： PCT/IB11/55506 WO 20111207
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers>1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.