发明申请
US20130249058A1 SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY
有权
包含半导体体中的掺杂区域的半导体元件和用于在半导体体内产生掺杂区域的方法
- 专利标题： SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY
- 专利标题（中）： 包含半导体体中的掺杂区域的半导体元件和用于在半导体体内产生掺杂区域的方法
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申请号： US13613985申请日： 2012-09-13
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公开(公告)号： US20130249058A1公开(公告)日： 2013-09-26
- 发明人: Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
- 申请人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102011113549.2 20110915
- 主分类号： H01L29/36
- IPC分类号： H01L29/36 ; H01L21/265
摘要：
A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
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