Invention Application
- Patent Title: METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13893937Application Date: 2013-05-14
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Publication No.: US20130252382A1Publication Date: 2013-09-26
- Inventor: Oliver Haeberlen , Klaus Schiess , Stefan Kramp
- Applicant: Infineon Technologies AG
- Main IPC: H01L21/50
- IPC: H01L21/50

Abstract:
A method of manufacturing a semiconductor device includes providing an electrically conductive carrier and placing a semiconductor chip over the carrier. The method includes applying an electrically insulating layer over the carrier and the semiconductor chip. The electrically insulating layer has a first face facing the carrier and a second face opposite to the first face. The method includes selectively removing the electrically insulating layer and applying solder material where the electrically insulating layer is removed and on the second face of the electrically insulating layer.
Public/Granted literature
- US10418319B2 Method of manufacturing a semiconductor device Public/Granted day:2019-09-17
Information query
IPC分类: