发明申请
- 专利标题: Semiconductor Device and Method of Manufacturing the Same
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13520791申请日: 2012-04-11
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公开(公告)号: US20130256808A1公开(公告)日: 2013-10-03
- 发明人: Huaxiang Yin , xiaolong Ma , Qiuxia Xu , Dapeng Chen
- 申请人: Huaxiang Yin , xiaolong Ma , Qiuxia Xu , Dapeng Chen
- 优先权: CN20120083156.1 20120327; CNPCT/CN2012/000488 20120411
- 国际申请: PCT/CN2012/000488 WO 20120411
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L21/8236
摘要:
The present invention discloses a semiconductor device, comprising a first MOSFET; a second MOSFET; a first stress liner covering the first MOSFET and having a first stress; a second stress liner covering the second MOSFET and having a second stress; wherein the second stress liner and/or the first stress liner comprise(s) a metal oxide. In accordance with the high-stress CMOS and method of manufacturing the same of the present invention, a stress layer comprising a metal oxide is formed selectively on PMOS and NMOS respectively by using a CMOS compatible process, whereby carrier mobility of the channel region is effectively enhanced and the performance of the device is improved.
公开/授权文献
- US09312187B2 Semiconductor device and method of manufacturing the same 公开/授权日:2016-04-12