发明申请
- 专利标题： Elongated Bumps in Integrated Circuit Devices
- 专利标题（中）： 集成电路器件中的伸长的冲击波
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申请号： US13559840申请日： 2012-07-27
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公开(公告)号： US20130256874A1公开(公告)日： 2013-10-03
- 发明人: Yen-Liang Lin , Chen-Shien Chen , Tin-Hao Kuo , Sheng-Yu Wu , Tsung-Shu Lin , Chang-Chia Huang
- 申请人： Yen-Liang Lin , Chen-Shien Chen , Tin-Hao Kuo , Sheng-Yu Wu , Tsung-Shu Lin , Chang-Chia Huang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498
摘要：
A device includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. The passivation layer has a first opening overlapping the metal pad, wherein the first opening has a first lateral dimension measured in a direction parallel to a major surface of the substrate. A polymer layer is over the passivation layer and covering the edge portions of the metal pad. The polymer layer has a second opening overlapping the metal pad. The second opening has a second lateral dimension measured in the direction. The first lateral dimension is greater than the second lateral dimension by more than about 7 μm. A Under-Bump metallurgy (UBM) includes a first portion in the second opening, and a second portion overlying portions of the polymer layer.
公开/授权文献
- US08922006B2 Elongated bumps in integrated circuit devices 公开/授权日：2014-12-30
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