发明申请
- 专利标题: BONDING PAD STRUCTURE WITH DENSE VIA ARRAY
- 专利标题(中): 通过阵列粘接结构与DENSE
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申请号: US13435702申请日: 2012-03-30
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公开(公告)号: US20130256893A1公开(公告)日: 2013-10-03
- 发明人: Tsung-Han TSAI , Jung-Chi JENG , Yueh-Ching CHANG , Volume CHIEN , Huang-Ta HUANG , Chi-Cherng JENG
- 申请人: Tsung-Han TSAI , Jung-Chi JENG , Yueh-Ching CHANG , Volume CHIEN , Huang-Ta HUANG , Chi-Cherng JENG
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/485
- IPC分类号: H01L23/485 ; H01L21/768
摘要:
A bonding pad structure includes a substrate and a first conductive island formed in a first dielectric layer and disposed over the substrate. A first via array having a plurality of vias is formed in a second dielectric layer and disposed over the first conductive island. A second conductive island is formed in a third dielectric layer and disposed over the first via array. A bonding pad is disposed over the second conductive island. The first conductive island, the first via array, and the second conductive island are electrically connected to the bonding pad. The first via array is connected to no other conductive island in the first dielectric layer except the first conductive island. No other conductive island in the third dielectric layer is connected to the first via array except the second conductive island.
公开/授权文献
- US09041204B2 Bonding pad structure with dense via array 公开/授权日:2015-05-26
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