发明申请
- 专利标题： Dual Mode Write Non-Volatile Memory System
- 专利标题（中）： 双模写非易失性存储器系统
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申请号： US13993596申请日： 2011-12-30
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公开(公告)号： US20130268726A1公开(公告)日： 2013-10-10
- 发明人: Xin Guo , Kiran Pangal , Paul D. Ruby , Feng Zhu
- 申请人： Xin Guo , Kiran Pangal , Paul D. Ruby , Feng Zhu
- 国际申请： PCT/US11/68002 WO 20111230
- 主分类号： G06F12/02
- IPC分类号： G06F12/02
摘要：
Host writes may be handled differently from background writes to non-volatile memory systems. As a result of using different write algorithms for host writes and backgrounds writes, maximum system lifetime and the maximum system performance may be improved in some embodiments.
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