发明申请
- 专利标题： RESISTANCE CHANGE MEMORY DEVICE HAVING THRESHOLD SWITCHING AND MEMORY SWITCHING CHARACTERISTICS, METHOD OF FABRICATING THE SAME, AND RESISTANCE CHANGE MEMORY DEVICE INCLUDING THE SAME
- 专利标题（中）： 具有阈值切换和存储器切换特性的电阻变化存储器件，其制造方法和包括其的电阻变化存储器件
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申请号： US13864548申请日： 2013-04-17
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公开(公告)号： US20130270509A1公开(公告)日： 2013-10-17
- 发明人: Hyunsang HWANG , Seonghyun KIM , Xinjun LIU
- 申请人： Hyunsang HWANG , Seonghyun KIM , Xinjun LIU
- 申请人地址： KR Buk-gu
- 专利权人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址： KR Buk-gu
- 优先权： KR10-2012-0039566 20120417
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
Disclosed are a resistance change memory device, a method of fabricating the same, and a resistance change memory array including the same. The resistance change memory device includes a first electrode and a second electrode. A hybrid switching layer is interposed between the first electrode and the second electrode. The hybrid switching layer is a metal oxide layer having both threshold switching characteristics and memory switching characteristics.
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