发明申请
- 专利标题: Metal Grid in Backside Illumination Image Sensor Chips and Methods for Forming the Same
- 专利标题(中): 金属网格背面照明图像传感器芯片及其形成方法
-
申请号: US13449019申请日: 2012-04-17
-
公开(公告)号: US20130270667A1公开(公告)日: 2013-10-17
- 发明人: Chih-Chien Wang , Chu-Wei Chang , Wang-Pen Mo , Hung-Chang Hsieh
- 申请人: Chih-Chien Wang , Chu-Wei Chang , Wang-Pen Mo , Hung-Chang Hsieh
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L27/146 ; H01L31/18
摘要:
A method includes forming a plurality of image sensors on a front side of a semiconductor substrate, and forming a dielectric layer on a backside of the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The dielectric layer is patterned into a plurality of grid-filling regions, wherein each of the plurality of grid-filling regions overlaps one of the plurality of image sensors. A metal layer is formed on top surfaces and sidewalls of the plurality of grid-filling regions. The metal layer is etched to remove horizontal portions of the metal layer, wherein vertical portions of the metal layer remain after the step of etching to form a metal grid. A transparent material is filled into grid openings of the metal grid.