发明申请
- 专利标题： Dummy FinFET Structure and Method of Making Same
- 专利标题（中）： 虚拟FinFET结构及其制作方法
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申请号： US13454960申请日： 2012-04-24
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公开(公告)号： US20130277760A1公开(公告)日： 2013-10-24
- 发明人: Chang-Shen Lu , Chih-Tang Peng , Tai-Chun Huang , Pei-Ren Jeng , Hao-Ming Lien , Yi-Hung Lin , Tze-Liang Lee , Syun-Ming Jang
- 申请人： Chang-Shen Lu , Chih-Tang Peng , Tai-Chun Huang , Pei-Ren Jeng , Hao-Ming Lien , Yi-Hung Lin , Tze-Liang Lee , Syun-Ming Jang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/20
摘要：
A FinFET device may include a dummy FinFET structure laterally adjacent an active FinFET structure to reduce stress imbalance and the effects of stress imbalance on the active FinFET structure. The FinFET device comprises an active FinFET comprising a plurality of semiconductor fins, and a dummy FinFET comprising a plurality of semiconductor fins. The active FinFET and the dummy FinFET are laterally spaced from each other by a spacing that is related to the fin pitch of the active FinFET.
公开/授权文献
- US09647066B2 Dummy FinFET structure and method of making same 公开/授权日：2017-05-09
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