发明申请
- 专利标题： GROUP III-N NANOWIRE TRANSISTORS
- 专利标题（中）： III-N纳米晶体管
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申请号： US13976413申请日： 2011-12-19
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公开(公告)号： US20130279145A1公开(公告)日： 2013-10-24
- 发明人: Han Wui Then , Robert Chau , Benjamin Chu-Kung , Gilbert Dewey , Jack Kavalieros , Matthew Metz , Niloy Mukherjee , Ravi Pillarisetty , Marko Radosavljevic
- 申请人： Han Wui Then , Robert Chau , Benjamin Chu-Kung , Gilbert Dewey , Jack Kavalieros , Matthew Metz , Niloy Mukherjee , Ravi Pillarisetty , Marko Radosavljevic
- 国际申请： PCT/US11/65919 WO 20111219
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/66
摘要：
A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region electrically coupled with a first end of the channel region, and a drain region electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.
公开/授权文献
- US09240410B2 Group III-N nanowire transistors 公开/授权日：2016-01-19
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