发明申请
- 专利标题: SEMICONDUCTOR LASER DEVICE
- 专利标题(中): 半导体激光器件
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申请号: US13877911申请日: 2011-10-12
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公开(公告)号: US20130279530A1公开(公告)日: 2013-10-24
- 发明人: Nobuto Kageyama , Hirofumi Miyajima , Hirofumi Kan
- 申请人: Nobuto Kageyama , Hirofumi Miyajima , Hirofumi Kan
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 优先权: JP2010-232969 20101015; JP2010-232973 20101015
- 国际申请: PCT/JP2011/073433 WO 20111012
- 主分类号: H01S5/024
- IPC分类号: H01S5/024
摘要:
A semiconductor laser bar 2 is mounted onto a liquid-cooled heat sink 1. A molybdenum reinforcement member 3 is fixed onto the surface opposite to the surface on which the semiconductor laser module 2 is mounted. The molybdenum has a linear expansion coefficient less than that of the heat sink 1. Sub-mounts are preferably made of a Cu—W alloy, more preferably of the reinforcement member 3 molybdenum. In this case, the stresses that are imposed on the heat sink 1 when being expanded or contracted can cancel each other out.
公开/授权文献
- US08879592B2 Semiconductor laser device 公开/授权日:2014-11-04
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