- 专利标题: FET-BOUNDING FOR FAST TCAD-BASED VARIATION MODELING
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申请号: US13457722申请日: 2012-04-27
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公开(公告)号: US20130289965A1公开(公告)日: 2013-10-31
- 发明人: Rajiv V. Joshi , Rouwaida N. Kanj , Keunwoo Kim
- 申请人: Rajiv V. Joshi , Rouwaida N. Kanj , Keunwoo Kim
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.
公开/授权文献
- US09411921B2 FET-bounding for fast TCAD-based variation modeling 公开/授权日:2016-08-09
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