发明申请
US20130292634A1 RESISTANCE-SWITCHING MEMORY CELLS HAVING REDUCED METAL MIGRATION AND LOW CURRENT OPERATION AND METHODS OF FORMING THE SAME
审中-公开
具有减少的金属迁移和低电流操作的电阻切换存储器单元及其形成方法
- 专利标题： RESISTANCE-SWITCHING MEMORY CELLS HAVING REDUCED METAL MIGRATION AND LOW CURRENT OPERATION AND METHODS OF FORMING THE SAME
- 专利标题（中）： 具有减少的金属迁移和低电流操作的电阻切换存储器单元及其形成方法
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申请号： US13465263申请日： 2012-05-07
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公开(公告)号： US20130292634A1公开(公告)日： 2013-11-07
- 发明人: Yung-Tin Chen , Kun Hou , Zhida Lan
- 申请人： Yung-Tin Chen , Kun Hou , Zhida Lan
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24
摘要：
In some aspects, a memory cell is provided that includes a steering element, a metal-insulator-metal (“MIM”) stack coupled in series with the steering element, and a conductor above the MIM stack. The MIM stack includes a resistance switching element and a top electrode disposed on the resistance switching element, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer between the MIM stack and the conductor. Numerous other aspects are provided.
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