发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13802538申请日： 2013-03-13
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公开(公告)号： US20130292740A1公开(公告)日： 2013-11-07
- 发明人: Junichi YAMASHITA , Tomohide TERASHIMA
- 申请人： Junichi YAMASHITA , Tomohide TERASHIMA
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2012-104502 20120501
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L27/06
摘要：
In a region located between a collector electrode and a semiconductor substrate, there are a portion where a hollow region is located and a portion where no hollow region is located. Between the collector electrode and the portion where no hollow region is located in the semiconductor substrate, a floating silicon layer electrically isolated by insulating films is formed.