发明申请
US20130293857A1 LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE
有权
具有双重边缘屏蔽装置的平面设备及其使用方法
- 专利标题: LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE
- 专利标题(中): 具有双重边缘屏蔽装置的平面设备及其使用方法
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申请号: US13461500申请日: 2012-05-01
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公开(公告)号: US20130293857A1公开(公告)日: 2013-11-07
- 发明人: Tung-Li WU , Chin-Hsiang LIN , Heng-Hsin LIU , Jui-Chun PENG
- 申请人: Tung-Li WU , Chin-Hsiang LIN , Heng-Hsin LIU , Jui-Chun PENG
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03B27/50
- IPC分类号: G03B27/50
摘要:
A lithography apparatus includes at least two reticle edge masking assemblies (REMAs). The lithography apparatus further includes a light source configured to emit a light beam having a wavelength and a beam separating element configured to divide the light beam into more than one collimated light beam. Each REMA is positioned to receive one of the more than one collimating light beams and each REMA comprises a movable slit for passing the one collimated light beam therethrough. The lithography apparatus further includes at least one mask having a pattern, where the at least one mask is configured to receive light from at least one of the REMA and a projection lens configured to receive light from the at least one mask. A method of using a lithography apparatus is also discussed.
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