发明申请
- 专利标题： LEAD STRUCTURES WITH VERTICAL OFFSETS
- 专利标题（中）： 具有垂直偏移的引导结构
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申请号： US13989314申请日： 2011-11-21
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公开(公告)号： US20130299958A1公开(公告)日： 2013-11-14
- 发明人: Richard Dewitt Crisp , Belgacem Haba , Wael Zohni
- 申请人： Richard Dewitt Crisp , Belgacem Haba , Wael Zohni
- 申请人地址： US CA San Jose
- 专利权人： Tessera, Inc.
- 当前专利权人： Tessera, Inc.
- 当前专利权人地址： US CA San Jose
- 国际申请： PCT/US11/61647 WO 20111121
- 主分类号： H01L23/495
- IPC分类号： H01L23/495
摘要：
A microelectronic structure includes a first row of contacts (14) and a second row of contacts (24) offset from the first row, so that the first and second rows cooperatively define pairs of contacts. These pairs of contacts include first pairs (30a) and second pairs (30b) arranged in alternating sequence in the row direction. The first pairs are provided with low connectors (32a), whereas the second pairs are provided with high connectors (32b). The high connectors and low connectors have sections vertically offset from one another to reduce mutual impedance between adjacent connectors.
公开/授权文献
- US09123713B2 Lead structures with vertical offsets 公开/授权日：2015-09-01
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