发明申请
US20130301351A1 Channel Boosting Using Secondary Neighbor Channel Coupling In Non-Volatile Memory
有权
在非易失性存储器中使用次邻居信道耦合的信道增强
- 专利标题: Channel Boosting Using Secondary Neighbor Channel Coupling In Non-Volatile Memory
- 专利标题(中): 在非易失性存储器中使用次邻居信道耦合的信道增强
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申请号: US13467289申请日: 2012-05-09
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公开(公告)号: US20130301351A1公开(公告)日: 2013-11-14
- 发明人: Deepanshu Dutta , Shinji Sato , Fumiko Yano
- 申请人: Deepanshu Dutta , Shinji Sato , Fumiko Yano
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/12
摘要:
In a non-volatile storage system, a programming portion of a program-verify iteration has multiple programming pulses, and storage elements along a word line are selected for programming according to a pattern. Unselected storage elements are grouped to benefit from channel-to-channel capacitive coupling from both primary and secondary neighbor storage elements. The coupling is helpful to boost channel regions of the unselected storage elements to a higher channel potential to prevent program disturb. Each selected storage element has a different relative position within its set. For example, during a first programming pulse, first, second and third storage elements are selected in first, second and third sets, respectively. During a second programming pulse, second, third and first storage elements are selected in the first, second and third sets, respectively. During a third programming pulse, third, first and second storage elements are selected in the first, second and third sets, respectively.
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