发明申请
- 专利标题： ETCH RESISTANT BARRIER FOR REPLACEMENT GATE INTEGRATION
- 专利标题（中）： 用于替换门槛整合的耐蚀阻挡层
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申请号： US13494511申请日： 2012-06-12
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公开(公告)号： US20130307079A1公开(公告)日： 2013-11-21
- 发明人: HEMANTH JAGANNATHAN , SANJAY MEHTA , CHUN-CHEN YEH
- 申请人： HEMANTH JAGANNATHAN , SANJAY MEHTA , CHUN-CHEN YEH
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Semiconductor devices and methods of their fabrication are disclosed. One device includes a plurality of gates and a dielectric gap filling material with a pre-determined aspect ratio that is between the gates. The device further includes an etch resistant nitride layer that is configured to maintain the aspect ratio of the dielectric gap filling material during fabrication of the device and is disposed above the dielectric gap filling material and between the plurality of gates.
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