Invention Application
US20130307963A1 METHOD AND APPARATUS FOR INSPECTING PATTERNS FORMED ON A SUBSTRATE
有权
用于检查形成在基底上的图案的方法和装置
- Patent Title: METHOD AND APPARATUS FOR INSPECTING PATTERNS FORMED ON A SUBSTRATE
- Patent Title (中): 用于检查形成在基底上的图案的方法和装置
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Application No.: US13919249Application Date: 2013-06-17
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Publication No.: US20130307963A1Publication Date: 2013-11-21
- Inventor: Kaoru SAKAI , Shunji Maeda , Hisae Shibuya , Hidetoshi Nishiyama
- Applicant: Hitachi High-Technologies Corporation
- Priority: JP2005-007011 20050114; JP2005-178715 20050620
- Main IPC: G06T7/00
- IPC: G06T7/00

Abstract:
The pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors that synchronously acquire images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes a means for detecting a statistical offset value from the feature amount to be a defect, thereby properly detecting the defect even when a brightness difference is occurring in association with film a thickness difference in a wafer.
Public/Granted literature
- US08824774B2 Method and apparatus for inspecting patterns formed on a substrate Public/Granted day:2014-09-02
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