发明申请
US20130309401A1 ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
审中-公开
原子层沉积装置和原子层沉积法
- 专利标题: ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
- 专利标题(中): 原子层沉积装置和原子层沉积法
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申请号: US13983713申请日: 2012-02-10
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公开(公告)号: US20130309401A1公开(公告)日: 2013-11-21
- 发明人: Naomasa Miyatake
- 申请人: Naomasa Miyatake
- 申请人地址: JP Chuo-ku, Tokyo
- 专利权人: Mitsui Engineering & Shipbuilding Co., Ltd.
- 当前专利权人: Mitsui Engineering & Shipbuilding Co., Ltd.
- 当前专利权人地址: JP Chuo-ku, Tokyo
- 优先权: JP2011-028623 20110214
- 国际申请: PCT/JP2012/000915 WO 20120210
- 主分类号: C23C16/455
- IPC分类号: C23C16/455
摘要:
An atomic layer deposition apparatus that forms a thin film on a substrate, the atomic layer deposition apparatus includes: a deposition vessel in which a source gas supply port and a reactant gas supply port are formed; a source gas supply part operable to supply the source gas to the source gas supply port and that includes a liquid source storage part and a vaporization controller, the liquid source storage part storing a liquid source that is a source material of the thin film, and the vaporization controller controlling a flow rate by directly vaporizing the liquid source stored in the liquid source storage part; a reactant gas supply part operable to supply a reactant gas to the reactant gas supply port, the reactant gas reacting with the source gas to form the thin film; a controller operable to control the source gas supply part and the reactant gas supply part to supply the source gas and the reactant gas alternately; a screen plate that is disposed such that the source gas supplied from the source gas supply port collides therewith; and a temperature adjuster operable to adjust a temperature at the screen plate.
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