Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING DEVICE
- Patent Title (中): 半导体发光器件
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Application No.: US13842812Application Date: 2013-03-15
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Publication No.: US20130313514A1Publication Date: 2013-11-28
- Inventor: Kyung Wook HWANG , Geon Wook YOO , Nam Goo CHA , Jae Hyeok HEO , Han Kyu SEONG , Hun Jae CHUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2012-0054692 20120523; KR10-2013-0008121 20130124
- Main IPC: H01L33/16
- IPC: H01L33/16

Abstract:
There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.
Information query
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