- 专利标题： DRIFT-INSENSITIVE OR INVARIANT MATERIAL FOR PHASE CHANGE MEMORY
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申请号： US13478932申请日： 2012-05-23
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公开(公告)号： US20130314983A1公开(公告)日： 2013-11-28
- 发明人: Chung H. Lam , Jing Li , Binquan Luan , Glenn J. Martyna , Dennis M. Newns
- 申请人： Chung H. Lam , Jing Li , Binquan Luan , Glenn J. Martyna , Dennis M. Newns
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L47/00
摘要：
A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.