发明申请
- 专利标题： FIN ISOLATION FOR MULTIGATE TRANSISTORS
- 专利标题（中）： FIN分离多晶硅晶体管
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申请号： US13478976申请日： 2012-05-23
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公开(公告)号： US20130316513A1公开(公告)日： 2013-11-28
- 发明人: VEERARAGHAVAN S. BASKER , EFFENDI LEOBANDUNG , TENKO YAMASHITA , CHUN-CHEN YEH
- 申请人： VEERARAGHAVAN S. BASKER , EFFENDI LEOBANDUNG , TENKO YAMASHITA , CHUN-CHEN YEH
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Multigate transistor devices and methods of their fabrication are disclosed. In one method, a substrate including a semiconductor upper layer and a lower layer beneath the upper layer is provided. The lower layer has a rate of transformation into a dielectric that is higher than a rate of transformation into a dielectric of the upper layer when the upper and lower layers are subjected to dielectric transformation conditions. Fins are formed in the upper layer, and the lower layer beneath the fins is transformed into a dielectric material to electrically isolate the fins. In addition, a gate structure is formed over the fins to complete the multigate transistor device.
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