发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13601396申请日: 2012-08-31
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公开(公告)号: US20130320424A1公开(公告)日: 2013-12-05
- 发明人: Ki Hong LEE , Seung Ho PYI , Seok Min JEON
- 申请人: Ki Hong LEE , Seung Ho PYI , Seok Min JEON
- 申请人地址: KR Icheon-si Gyeonggi-do
- 专利权人: SK HYNIX INC.
- 当前专利权人: SK HYNIX INC.
- 当前专利权人地址: KR Icheon-si Gyeonggi-do
- 优先权: KR10-2012-0059920 20120604
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor device includes a first source layer; at least one of a second source layer, the second source layer formed substantially in the first source layer; a plurality of conductive layers stacked substantially over the first source layer; channel layers that pass through the plurality of conductive layers and couple to the second source layer; and at least one of a third source layer, the third source layer formed substantially in the second source layer, wherein the third source layer passes through the second source layer and is coupled to the first source layer.