发明申请
- 专利标题： Vertical Power MOSFET and Methods for Forming the Same
- 专利标题（中）： 垂直功率MOSFET及其形成方法
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申请号： US13486768申请日： 2012-06-01
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公开(公告)号： US20130320431A1公开(公告)日： 2013-12-05
- 发明人: Po-Chih Su , Hsueh-Liang Chou , Ruey-Hsin Liu , Chun-Wai Ng
- 申请人： Po-Chih Su , Hsueh-Liang Chou , Ruey-Hsin Liu , Chun-Wai Ng
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A device includes a semiconductor region in a semiconductor chip, a gate dielectric layer over the semiconductor region, and a gate electrode over the gate dielectric. A drain region is disposed at a top surface of the semiconductor region and adjacent to the gate electrode. A gate spacer is on a sidewall of the gate electrode. A dielectric layer is disposed over the gate electrode and the gate spacer. A conductive field plate is over the dielectric layer, wherein the conductive field plate has a portion on a drain side of the gate electrode. A deep metal via is disposed in the semiconductor region. A source electrode is underlying the semiconductor region, wherein the source electrode is electrically shorted to the conductive field plate through the deep metal via.
公开/授权文献
- US08823096B2 Vertical power MOSFET and methods for forming the same 公开/授权日：2014-09-02
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