- 专利标题： Trench Power MOSFET
-
申请号： US13486681申请日： 2012-06-01
-
公开(公告)号： US20130320435A1公开(公告)日： 2013-12-05
- 发明人: Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
- 申请人： Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A device includes a semiconductor region of a first conductivity type, a trench extending into the semiconductor region, and a conductive field plate in the trench. A first dielectric layer separates a bottom and sidewalls of the field plate from the semiconductor region. A main gate is disposed in the trench and overlapping the field plate. A second dielectric layer is disposed between and separating the main gate and the field plate from each other. A Doped Drain (DD) region of the first conductivity type is under the second dielectric layer, wherein an edge portion of the main gate overlaps the DD region. A body region includes a first portion at a same level as a portion of the main gate, and a second portion at a same level as, and contacting, the DD region, wherein the body region is of a second conductivity type opposite the first conductivity type.
公开/授权文献
- US08896060B2 Trench power MOSFET 公开/授权日：2014-11-25
信息查询
IPC分类:
