发明申请
US20130320478A1 System and Method for Processing a Backside Illuminated Photodiode
有权
用于处理背面照明光电二极管的系统和方法
- 专利标题: System and Method for Processing a Backside Illuminated Photodiode
- 专利标题(中): 用于处理背面照明光电二极管的系统和方法
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申请号: US13486833申请日: 2012-06-01
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公开(公告)号: US20130320478A1公开(公告)日: 2013-12-05
- 发明人: Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
- 申请人: Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L31/103
- IPC分类号: H01L31/103 ; H01L29/36 ; H01L31/18
摘要:
System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.