发明申请
- 专利标题： Re-distribution Layer Via Structure and Method of Making Same
- 专利标题（中）： 重新分配层通过结构和制作方法
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申请号： US13483999申请日： 2012-05-30
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公开(公告)号： US20130320522A1公开(公告)日： 2013-12-05
- 发明人: Feng-Liang Lai , Kai-Yuan Yang , Chia-Jen Leu , Sheng Chiang Hung
- 申请人： Feng-Liang Lai , Kai-Yuan Yang , Chia-Jen Leu , Sheng Chiang Hung
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/768 ; H01L23/48
摘要：
An embodiment is a semiconductor device comprising a contact pad over a substrate, wherein the contact pad is disposed over an integrated circuit on the substrate and a first passivation layer over the contact pad. A first via in the first passivation layer, wherein the first via has more than four sides, and wherein the first via extends to the contact pad.
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