发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13484352申请日: 2012-05-31
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公开(公告)号: US20130320554A1公开(公告)日: 2013-12-05
- 发明人: Hans-Joachim Barth
- 申请人: Hans-Joachim Barth
- 申请人地址: DE Neubiberg
- 专利权人: Intel Mobile Communications GmbH
- 当前专利权人: Intel Mobile Communications GmbH
- 当前专利权人地址: DE Neubiberg
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/768
摘要:
A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.
公开/授权文献
- US09245799B2 Semiconductor device and method of manufacturing thereof 公开/授权日:2016-01-26
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