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发明申请
US20130320818A1 SEMICONDUCTOR DEVICE, INVERTER DEVICE PROVIDED WITH SEMICONDUCTOR DEVICE, AND IN-VEHICLE ROTATING ELECTRICAL MACHINE PROVIDED WITH SEMICONDUCTOR DEVICE AND INVERTER DEVICE 有权
具有半导体器件的半导体器件，逆变器器件以及具有半导体器件和反相器器件的车载旋转电机

SEMICONDUCTOR DEVICE, INVERTER DEVICE PROVIDED WITH SEMICONDUCTOR DEVICE, AND IN-VEHICLE ROTATING ELECTRICAL MACHINE PROVIDED WITH SEMICONDUCTOR DEVICE AND INVERTER DEVICE
摘要：
Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.
摘要（中）：

提供一种半导体器件，包括：通过焊料（61）与第一基板（11）接合的第一MOS-FET（21）; 通过焊料（64）与第二基板（12）接合的第二MOS-FET（22）; 连接所述第一基板（11）和所述第二MOS-FET（22）的第一引线（31）; 以及连接所述第二MOS-FET（22）的第二引线（32）和向外部施加流过MOS-FET（21,22）的电流和电流通路构件（13）。 第二基板（12）比两个引线（31,32）更刚性，边界线（DD）与第二基板（12）相交而不与两个引线（31,32）相交，边界线包括一个 两个MOS-FET（21,22）沿着两个MOS-FET（21,22）彼此相对的方向彼此相对延伸的间隙部分（52）。

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