发明申请
- 专利标题： MEMORIES AND METHODS FOR PERFORMING COLUMN REPAIR
- 专利标题（中）： 用于执行柱修复的记忆和方法
-
申请号： US13483407申请日： 2012-05-30
-
公开(公告)号： US20130326292A1公开(公告)日： 2013-12-05
- 发明人: Nicholas HENDRICKSON
- 申请人： Nicholas HENDRICKSON
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C29/00
- IPC分类号： G11C29/00
摘要：
Memory devices adapted to repair single unprogrammable cells during a program operation, and to repair columns containing unprogrammable cells during a subsequent erase operation. Programming of such memory devices includes determining that a single cell is unprogrammable and repairing the single cell, and repairing a column containing the single cell responsive to a subsequent erase operation.
公开/授权文献
- US09043661B2 Memories and methods for performing column repair 公开/授权日：2015-05-26
信息查询
