发明申请
US20130328135A1 PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING
审中-公开
防止高K金属加工过程中的完全硅化物形成
- 专利标题： PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING
- 专利标题（中）： 防止高K金属加工过程中的完全硅化物形成
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申请号： US13494312申请日： 2012-06-12
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公开(公告)号： US20130328135A1公开(公告)日： 2013-12-12
- 发明人: Huiming Bu , Ming Cai , Kevin K. Chan , Dechao Guo , Ravikumar Ramachandran , Liyang Song , Chun-Chen Yeh
- 申请人： Huiming Bu , Ming Cai , Kevin K. Chan , Dechao Guo , Ravikumar Ramachandran , Liyang Song , Chun-Chen Yeh
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A gate stack structure for a transistor device includes a gate dielectric layer formed over a substrate; a first silicon gate layer formed over the gate dielectric layer; a dopant-rich monolayer formed over the first silicon gate layer; and a second silicon gate layer formed over the dopant-rich monolayer, wherein the dopant-rich monolayer prevents silicidation of the first silicon gate layer during silicidation of the second silicon gate layer.
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