Invention Application
- Patent Title: ADJUSTABLE AVALANCHE DIODE IN AN INTEGRATED CIRCUIT
- Patent Title (中): 在一体化电路中可调节的AVALANCHE二极管
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Application No.: US13895715Application Date: 2013-05-16
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Publication No.: US20130328150A1Publication Date: 2013-12-12
- Inventor: Raul Andres BIANCHI , Pascal FONTENEAU
- Applicant: STMicroelectronics International NV
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics International NV
- Current Assignee: STMicroelectronics International NV
- Current Assignee Address: FR Crolles
- Priority: FR12/55433 20120611
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L27/144 ; H01L31/18
Abstract:
An avalance diode including, between two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region, a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions approximately ranging between 50 and 200 nm.
Public/Granted literature
- US09018729B2 Adjustable avalanche diode in an integrated circuit Public/Granted day:2015-04-28
Information query
IPC分类:
