A thermistor includes a metal substrate, a semiconductor ceramic layer on the metal substrate, and a pair of split electrodes on the semiconductor layer. The semiconductor ceramic layer is formed by a solid-phase method. The metal substrate includes ceramic particles and is not interrupted in the direction of thickness by the ceramic particles or a pillar defined by a chain of the ceramic particles. Preferably, the metal substrate and the ceramic layer of the thermistor have a thickness of about 10 μm to about 80 μm and about 1 μm to about 10 μm, respectively.