发明申请
- 专利标题： Manufacturable High-k dram mim capacitor structure
- 专利标题（中）： 可制造的高电容电容器结构
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申请号： US13737467申请日： 2013-01-09
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公开(公告)号： US20130328168A1公开(公告)日： 2013-12-12
- 发明人: Sandra G. Malhotra , Wim Y. Deweerd , Hiroyuki Ode
- 申请人： INTERMOLECULAR INC.
- 申请人地址： US CA San Jose
- 专利权人： INTERMOLECULAR INC.
- 当前专利权人： INTERMOLECULAR INC.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L49/02
- IPC分类号： H01L49/02
摘要：
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin ( 3nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.
公开/授权文献
- US08679939B2 Manufacturable high-k DRAM MIM capacitor structure 公开/授权日：2014-03-25
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