发明申请
US20130330874A1 CHEMICAL BATH DEPOSITION METHOD FOR FABRICATION OF SEMICONDUCTOR FILMS 有权
用于制造半导体膜的化学浴沉积方法

  • 专利标题: CHEMICAL BATH DEPOSITION METHOD FOR FABRICATION OF SEMICONDUCTOR FILMS
  • 专利标题(中): 用于制造半导体膜的化学浴沉积方法
  • 申请号: US13971850
    申请日: 2013-08-21
  • 公开(公告)号: US20130330874A1
    公开(公告)日: 2013-12-12
  • 发明人: Jiaxiong Wang
  • 申请人: Jiaxiong Wang
  • 主分类号: H01L31/18
  • IPC分类号: H01L31/18
CHEMICAL BATH DEPOSITION METHOD FOR FABRICATION OF SEMICONDUCTOR FILMS
摘要:
A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments.
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