发明申请
US20130333923A1 MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATION
审中-公开
在纳米器件制造中使用的调制组合和应力控制的多层超大规模SiNx电介质
- 专利标题: MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATION
- 专利标题(中): 在纳米器件制造中使用的调制组合和应力控制的多层超大规模SiNx电介质
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申请号: US13495545申请日: 2012-06-13
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公开(公告)号: US20130333923A1公开(公告)日: 2013-12-19
- 发明人: Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Mei-Yee Shek , Hosadurga Shobha , Li-Qun Xia
- 申请人: Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Mei-Yee Shek , Hosadurga Shobha , Li-Qun Xia
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: C23C16/34
- IPC分类号: C23C16/34 ; H05K1/02
摘要:
A layer of silicon nitride having a thickness from 0.5 nanometers to 2.4 nanometers is deposited on a substrate. A plasma nitridation process is carried out on the layer. These steps are repeated for a plurality of additional layers of silicon nitride, until a predetermined thickness is attained. Such steps can be used to provide a multilayer silicon nitride dielectric formed on a substrate having an upper surface of dielectric material with Cu and other conductors embedded within, and a plurality of steps. The multilayer silicon nitride dielectric has a plurality of individual layers each having a thickness from 0.5 nanometers to 2.4 nanometers, and the multilayer silicon nitride dielectric conformally covers the steps of the substrate with a conformality of at least seventy percent. A multilayer silicon nitride dielectric, and a multilevel back end of line interconnect wiring structure using same, are also provided.