发明申请
- 专利标题: ION BEAM DEVICE AND MACHINING METHOD
- 专利标题(中): 离子束装置和加工方法
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申请号: US14002137申请日: 2012-01-13
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公开(公告)号: US20130334034A1公开(公告)日: 2013-12-19
- 发明人: Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
- 申请人: Shinya Kitayama , Satoshi Tomimatsu , Tsuyoshi Onishi
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-078432 20110331
- 国际申请: PCT/JP2012/050554 WO 20120113
- 主分类号: H01J37/317
- IPC分类号: H01J37/317
摘要:
Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.
公开/授权文献
- US09111721B2 Ion beam device and machining method 公开/授权日:2015-08-18
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