Invention Application
US20130335880A1 CAPACITOR, STRUCTURE AND METHOD OF FORMING CAPACITOR 审中-公开
电容器,形成电容器的结构和方法

  • Patent Title: CAPACITOR, STRUCTURE AND METHOD OF FORMING CAPACITOR
  • Patent Title (中): 电容器,形成电容器的结构和方法
  • Application No.: US13915286
    Application Date: 2013-06-11
  • Publication No.: US20130335880A1
    Publication Date: 2013-12-19
  • Inventor: Hidetoshi MASUDA
  • Applicant: Taiyo Yuden Co., Ltd.
  • Priority: JP2012-134862 20120614
  • Main IPC: H01G4/005
  • IPC: H01G4/005
CAPACITOR, STRUCTURE AND METHOD OF FORMING CAPACITOR
Abstract:
There is provided a capacitor including a dielectric layer having a first plane, a second plane opposite to the first plane, and a plurality of through-holes communicated with the first plane and the second plane, including a plurality of arrangement regions where arrangement directions of the plurality of through-holes are same; a first external electrode layer disposed on the first plane; a second external electrode layer disposed on the second plane; a first internal electrode housed in a part of the plurality of through-holes and connected to the first external electrode layer; and a second internal electrode housed in a part of the plurality of through-holes and connected to the second external electrode layer.
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