发明申请
US20130337174A1 VAPORIZATION SOURCE, VAPORIZATION CHAMBER, COATING METHOD AND NOZZLE PLATE 审中-公开
蒸发源,蒸发室,涂层方法和喷嘴板

VAPORIZATION SOURCE, VAPORIZATION CHAMBER, COATING METHOD AND NOZZLE PLATE
摘要:
The invention relates to vaporization source, an evaporation chamber, a coating method and a nozzle plate. The vaporization source according to the invention makes it possible to generate a high, stable melt flow rate having improved layer thickness homogeneity under vacuum conditions in a selenium atmosphere. The direction of the molecular flow of the vaporization source can be adjusted with respect to the substrate support located above the vaporization source.
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