发明申请
- 专利标题: MULTI-LEVEL MEMORY WITH DIRECT ACCESS
- 专利标题(中): 具有直接访问的多级记忆
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申请号: US13993695申请日: 2011-12-29
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公开(公告)号: US20130339572A1公开(公告)日: 2013-12-19
- 发明人: Blaise Fanning , Shekoufeh Qawami , Raymond S. Tetrick , Frank T. Hady
- 申请人: Blaise Fanning , Shekoufeh Qawami , Raymond S. Tetrick , Frank T. Hady
- 国际申请: PCT/US2011/067824 WO 20111229
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
Embodiments of a method, device, and system for implementing multi-level memory with direct access are disclosed. In one embodiment, the method includes designating an amount of a non-volatile random access memory (NVRAM) in a computer system to be utilized as a memory alternative for a dynamic random access memory (DRAM). The method continues by designating a second amount of the NVRAM to be utilized as a storage alternative for a mass storage device. Then the method re-designates at least a first portion of the first amount of NVRAM from the memory alternative designation to the storage alternative designation during operation of the computer system. Finally, the method re-designates at least a first portion of the second amount of NVRAM from the storage alternative designation to the memory alternative designation during operation of the computer system.
公开/授权文献
- US09190124B2 Multi-level memory with direct access 公开/授权日:2015-11-17
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