发明申请
- 专利标题： Reverse Conducting IGBT
- 专利标题（中）： 反向导通IGBT
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申请号： US13529166申请日： 2012-06-21
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公开(公告)号： US20130341673A1公开(公告)日： 2013-12-26
- 发明人: Frank Pfirsch , Dorothea Werber , Anton Mauder , Carsten Schaeffer
- 申请人： Frank Pfirsch , Dorothea Werber , Anton Mauder , Carsten Schaeffer
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region.
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