发明申请
- 专利标题： ULTRATHIN BODY FULLY DEPLETED SILICON-ON-INSULATOR INTEGRATED CIRCUITS AND METHODS FOR FABRICATING SAME
- 专利标题（中）： 超薄体全绝缘硅绝缘体集成电路及其制造方法
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申请号： US13530449申请日： 2012-06-22
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公开(公告)号： US20130341722A1公开(公告)日： 2013-12-26
- 发明人: Ralf Illgen , Stefan Flachowsky
- 申请人： Ralf Illgen , Stefan Flachowsky
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/76
摘要：
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary gate structure are formed on the substrate. The method implants ions to form lightly doped active areas around the gate structures. A diffusionless annealing process is performed on the active areas. Further, a compressive strain region is formed around the PFET gate structure and a tensile strain region is formed around the NFET gate structure.
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