A plural differential pair may include a first semiconductor fin having first and second drain areas. First and second body areas may be disposed on the fin between the first and second drain areas. A source area may be disposed on the fin between the first and second body areas. The plural differential pair may include a first pair of fin field effect (FinFET) transistors and a second pair of FinFET transistors. The plural differential pair may include first and second top fin areas projecting from respective portions of a top side of the first and second body areas of the fin. The first and second top fin areas may each have a width that is wider than the first and second body areas of the fin.