发明申请
- 专利标题： PREVENTING ISOLATION LEAKAGE IN III-V DEVICES
- 专利标题（中）： 防止III-V器件中的隔离泄漏
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申请号： US13538985申请日： 2012-06-29
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公开(公告)号： US20140001519A1公开(公告)日： 2014-01-02
- 发明人: Gilbert Dewey , Marko Radosavljevic , Ravi Pillarisetty , Benjamin Chu-Kung , Niloy Mukherjee
- 申请人： Gilbert Dewey , Marko Radosavljevic , Ravi Pillarisetty , Benjamin Chu-Kung , Niloy Mukherjee
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/762
摘要：
A fin is formed over a first barrier layer over a substrate. The first barrier layer has a band gap greater than the band gap of the fin. In one embodiment, a gate dielectric layer is deposited on the top surface and opposing sidewalls of the fin and is adjacent to a second barrier layer deposited on the first barrier layer underneath the fin. In one embodiment, the gate dielectric layer is deposited on the top surface and the opposing sidewalls of the fin and an isolating layer is formed adjacent to the first barrier layer underneath the fin. In one embodiment, the gate dielectric layer is deposited on the top surface and the opposing sidewalls of the fin, and an isolating layer is formed adjacent to the second barrier layer deposited between the fin and the first barrier layer.
公开/授权文献
- US09748338B2 Preventing isolation leakage in III-V devices 公开/授权日：2017-08-29
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