发明申请
US20140001563A1 SEMICONDUCTOR DEVICES FORMED ON A CONTINUOUS ACTIVE REGION WITH AN ISOLATING CONDUCTIVE STRUCTURE POSITIONED BETWEEN SUCH SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME
有权
在具有在这种半导体器件之间定位的隔离导电结构的连续活性区域上形成的半导体器件及其制造方法
- 专利标题： SEMICONDUCTOR DEVICES FORMED ON A CONTINUOUS ACTIVE REGION WITH AN ISOLATING CONDUCTIVE STRUCTURE POSITIONED BETWEEN SUCH SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME
- 专利标题（中）： 在具有在这种半导体器件之间定位的隔离导电结构的连续活性区域上形成的半导体器件及其制造方法
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申请号： US13539830申请日： 2012-07-02
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公开(公告)号： US20140001563A1公开(公告)日： 2014-01-02
- 发明人: Mahbub Rashed , David Doman , Marc Tarabbia , Irene Lin , Jeff Kim , Chinh Nguyen , Steve Soss , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- 申请人： Mahbub Rashed , David Doman , Marc Tarabbia , Irene Lin , Jeff Kim , Chinh Nguyen , Steve Soss , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L27/092
摘要：
One illustrative device disclosed herein includes a continuous active region defined in a semiconducting substrate, first and second transistors formed in and above the continuous active region, each of the first and second transistors comprising a plurality of doped regions formed in the continuous active region, a conductive isolating electrode positioned above the continuous active region between the first and second transistors and a power rail conductively coupled to the conductive isolating electrode.
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