发明申请
- 专利标题: STATE SENSING SYSTEM FOR EFUSE MEMORY
- 专利标题(中): 用于EFUSE存储器的状态感测系统
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申请号: US13535802申请日: 2012-06-28
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公开(公告)号: US20140003120A1公开(公告)日: 2014-01-02
- 发明人: Chihhung Liao , Phu Nguyen , Vimal R. Patel , George F. Paulik , Peder J. Paulson , Brian J. Reed , Salvatore N. Storino
- 申请人: Chihhung Liao , Phu Nguyen , Vimal R. Patel , George F. Paulik , Peder J. Paulson , Brian J. Reed , Salvatore N. Storino
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G11C17/16
- IPC分类号: G11C17/16 ; G06F17/50
摘要:
An eFuse circuit may include a wordline, a first eFuse, a first logic gate, a first blowFET, and a first bitline discharge device. The first eFuse may have a first end coupled to the wordline and a second end. The first eFuse may have a first resistance when unblown and a second resistance when blown. The first logic gate may be coupled to the first end of the first eFuse. The first logic gate may be capable of driving enough current to blow the first eFuse. The first blowFET may have a source coupled to a first supply voltage, a gate coupled to a program signal, and a drain coupled to the second end of the first eFuse. The first bitline discharge device may have a gate coupled to the second end of the first eFuse, a source coupled to the first supply voltage, and a drain coupled to a first bitline.
公开/授权文献
- US08780604B2 State sensing system for eFuse memory 公开/授权日:2014-07-15
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