发明申请
- 专利标题： MEMORY DEVICES WITH IN-BIT CURRENT LIMITERS
- 专利标题（中）： 带有电流限制的存储器件
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申请号： US13536602申请日： 2012-06-28
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公开(公告)号： US20140003139A1公开(公告)日： 2014-01-02
- 发明人: Matthew D. Pickett , Gilberto Medeiros Ribeiro
- 申请人： Matthew D. Pickett , Gilberto Medeiros Ribeiro
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A memory device includes a first conductive layer, a second conductive layer, an in-bit current limiter including a voltage controlled negative differential resistance (VC-NDR) layer in electrical contact with the first conductive layer and a memristor element in electrical contact with the VC-NDR layer and the second conductive layer. A method for programming a memory device that comprises a VC-NDR device is also provided.
公开/授权文献
- US08767449B2 Memory devices with in-bit current limiters 公开/授权日：2014-07-01
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