发明申请
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGING
- 专利标题(中): 制造半导体封装的方法
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申请号: US13534289申请日: 2012-06-27
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公开(公告)号: US20140004697A1公开(公告)日: 2014-01-02
- 发明人: GENG SHIN SHEN
- 申请人: GENG SHIN SHEN
- 申请人地址: TW HSINCHU
- 专利权人: CHIPMOS TECHNOLOGIES INC.
- 当前专利权人: CHIPMOS TECHNOLOGIES INC.
- 当前专利权人地址: TW HSINCHU
- 主分类号: H01L21/283
- IPC分类号: H01L21/283
摘要:
The present disclosure is related to a method of providing a die structure for semiconductor packaging. The method includes providing a substrate with a bonding pad; forming a patterned mask layer on the substrate; forming an opening on the mask layer; depositing a conductive layer in the opening; forming a cap layer on the conductive layer, and removing the mask layer. The cap layer forming step allows the contacting area between the cap layer and the conductive layer to be substantially equal to the top surface area of the conductive layer by reflowing solder material prior to the removal of the mask layer.
公开/授权文献
- US09023727B2 Method of manufacturing semiconductor packaging 公开/授权日:2015-05-05